The Science of Electronics in Extreme Electromagnetic Environments II - Circuit Effects

S. Hemmady, E. Schamiloglu, P. Zarkesh-Ha, G. Balakrishnan, G. Heileman, D. Dietz, S. Portillo, M. Martínez‐Ramón, T. Antonsen, N. Goldsman, E. Waks
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引用次数: 1

Abstract

This abstract covers Part-II of a two-part presentation series on the scientific advancements made in the AFOSR/AFRL Center of Excellence (CoE) for Electronics in Extreme Electromagnetic Environments, spanning the time-period 2015-present. In specific, this presentation focuses on the development and experimental validation of statistical and deterministic physics-based predictive models describing the functional state of electronic devices (semiconductor, electro-optic and quantum), and the amalgamation of these devices to circuits and subcomponents, when subjected to extreme electromagnetic interference (EEMI). This presentation follows a companion presentation [1] which discusses the development and experimental validation of statistical and deterministic physics-based models describing coupling paradigms for EEMI in complicated enclosures which houses these sensitive electronic devices, circuits and subcomponents. Taken together, the two presentations advance the state-of-the-art in fundamental physics-based modeling of current and future electronic technologies in extreme electromagnetic environments.
极端电磁环境下的电子学II -电路效应
本摘要涵盖了AFOSR/AFRL卓越中心(CoE)在极端电磁环境中取得的科学进步的两部分系列演讲的第二部分,涵盖了2015年至今的时间。具体而言,本演讲侧重于统计和确定性物理预测模型的开发和实验验证,这些模型描述了电子设备(半导体,电光和量子)的功能状态,以及这些设备在遭受极端电磁干扰(EEMI)时的电路和子组件的合并。本报告是继[1]的后续报告,[1]讨论了基于统计和确定性物理的模型的发展和实验验证,这些模型描述了复杂外壳中EEMI的耦合范例,这些外壳包含这些敏感的电子设备,电路和子组件。综上所述,这两份报告推进了在极端电磁环境下当前和未来电子技术的基于基础物理的最先进建模。
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