High performance pMOSFETs with Ni(Si/sub x/Ge/sub 1-x/)/poly-Si/sub 0.8/Ge/sub 0.2/ gate

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852791

J. Ku, C.-J. Choi, S. Song, S. Choi, K. Fujihara, H. Kang, S.I. Lee, H.-G. Choi, D. Ko

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引用次数: 2

Abstract

For the first time, Ni salicide process is applied directly on poly-Si/sub 0.8/Ge/sub 0.2/ gate, and pMOSFETs utilizing Ni(Si/sub x/Ge/sub 1-x/)/poly-Si/sub 0.8/Ge/sub 0.2/ gate are fully characterized. The excellent value (/spl sim/5/spl Omega///spl square/) of sheet resistance is achieved from 0.15 /spl mu/m Ni(Si/sub x/Ge/sub 1-x/)/Si/sub 0.8/Ge/sub 0.2/ gate, while Co salicide process applied on Si/sub 0.8/Ge/sub 0.2/ gate results in R/sub s/ fail due to Ge segregation. It is also important to note that, with poly-Si/sub 0.8/Ge/sub 0.2/ gate and Ni salicide process, the current drivability of pMOSFETs is significantly improved due to less gate poly depletion and lower source-to-drain resistance (R/sub sd/). Conclusively, Ni salicide is the exclusive process for successful germanosilicide formation on poly-Si/sub 0.8/Ge/sub 0.2/ gate without poly-Si buffer layer and Ni(Si/sub x/Ge/sub 1-x/)/poly-Si/sub 0.8/Ge/sub 0.2/ gate can increase L/sub dsat/ of pMOSFETs by 20% as compared to conventional CoSi/sub 2//poly-Si gate structure.

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具有Ni(Si/sub x/Ge/sub 1-x/)/多晶硅/sub 0.8/Ge/sub 0.2栅极的高性能pmosfet

首次将Ni盐化工艺直接应用于poly-Si/sub 0.8/Ge/sub 0.2/栅极，并对Ni(Si/sub x/Ge/sub 1-x/)/poly-Si/sub 0.8/Ge/sub 0.2/栅极的pmosfet进行了全面表征。在0.15 /spl mu/m Ni(Si/sub x/Ge/sub 1-x/)/Si/sub 0.8/Ge/sub 0.2/栅极上应用Co盐化工艺，由于Ge偏析导致R/sub s/失效，获得了优异的片材电阻值(/spl sim/5/spl Omega///spl square/)。同样值得注意的是，采用poly- si /sub 0.8/Ge/sub 0.2/栅极和Ni salicide工艺，pmosfet的电流可驱动性显著提高，因为栅极多晶硅耗尽更少，源极漏极电阻(R/sub sd/)更低。综上所述，在没有多晶硅缓冲层的多晶硅/sub 0.8/Ge/sub 0.2/栅极上成功形成锗硅化物的唯一工艺是Ni(Si/sub x/Ge/sub 1-x/)/多晶硅/sub 0.8/Ge/sub 0.2/栅极，与传统的CoSi/sub 2//多晶硅栅极结构相比，Ni(Si/sub x/Ge/sub 1-x/)/多晶硅/sub 0.8/Ge/sub 0.2/栅极结构可以使pmosfet的L/sub dsat/提高20%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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