A design for Fuse IC inbuilt memory saving element

Shashank Bhatnagar, V. Khare
{"title":"A design for Fuse IC inbuilt memory saving element","authors":"Shashank Bhatnagar, V. Khare","doi":"10.1109/BEIAC.2012.6226052","DOIUrl":null,"url":null,"abstract":"The paper emphasis on the simulation of Fuse IC with inbuilt memory element. The fuse IC is designed to prevent damages from external electrical fluctuations. The Fuse IC is integrated with multiple level of fuses which comes action one after another as fuses goes off one by one. The working of Fuse IC is a hybrid characteristics of MCB and wired fuse. The Fuse IC works as wire fuse i.e. the connection breaks in the same manner as for the wire fuse breaks itself when current of more than a specified amount flows through it and, it has a characteristic of MCB as it set itself again in fuse on condition when a fuse goes off after a fluctuations. The Fuse IC is integrated with memory part also in which comprises of flip flops. The memory element used when Main IC suffers, off condition due to the burning of fuse and it suffers power off. In such condition System suffers data lost conditions means the data which is coming to processing purpose to Main IC will be lost due to power drop to Main IC, so for solving this problem lets presume that the delay between switch off to switch on the Main IC after a fluctuation be 1 bit time so after burning of each level 1 flip flop comes in to the working condition to work as memory element.","PeriodicalId":404626,"journal":{"name":"2012 IEEE Business, Engineering & Industrial Applications Colloquium (BEIAC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Business, Engineering & Industrial Applications Colloquium (BEIAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEIAC.2012.6226052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The paper emphasis on the simulation of Fuse IC with inbuilt memory element. The fuse IC is designed to prevent damages from external electrical fluctuations. The Fuse IC is integrated with multiple level of fuses which comes action one after another as fuses goes off one by one. The working of Fuse IC is a hybrid characteristics of MCB and wired fuse. The Fuse IC works as wire fuse i.e. the connection breaks in the same manner as for the wire fuse breaks itself when current of more than a specified amount flows through it and, it has a characteristic of MCB as it set itself again in fuse on condition when a fuse goes off after a fluctuations. The Fuse IC is integrated with memory part also in which comprises of flip flops. The memory element used when Main IC suffers, off condition due to the burning of fuse and it suffers power off. In such condition System suffers data lost conditions means the data which is coming to processing purpose to Main IC will be lost due to power drop to Main IC, so for solving this problem lets presume that the delay between switch off to switch on the Main IC after a fluctuation be 1 bit time so after burning of each level 1 flip flop comes in to the working condition to work as memory element.
保险丝集成电路内置存储元件的设计
本文重点研究了内置存储元件的熔断器集成电路的仿真。熔断器集成电路的设计是为了防止外部电波动造成的损坏。保险丝IC集成了多个级别的保险丝,当保险丝一个接一个熄灭时,保险丝一个接一个地起作用。熔断器集成电路的工作是MCB和有线熔断器的混合特性。熔断器IC的工作原理与熔断器一样,即当电流超过规定的量流过熔断器时,连接断开的方式与熔断器本身断开的方式相同,并且当熔断器在波动后熄灭时,它具有MCB的特性,因为它再次将自己置于熔断器状态。保险丝集成电路还集成了存储器部分,存储器部分由触发器组成。当主集成电路因烧断保险丝而断电时使用的存储元件。在这种情况下,系统遭受数据丢失的情况是指由于主IC的电源下降而导致进入主IC处理目的的数据丢失,因此为了解决这个问题,我们假设在一次波动后,主IC的开关断开到开关打开之间的延迟为1位时间,因此在每个1级触发器烧录后进入工作状态作为存储元件工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信