{"title":"A design for Fuse IC inbuilt memory saving element","authors":"Shashank Bhatnagar, V. Khare","doi":"10.1109/BEIAC.2012.6226052","DOIUrl":null,"url":null,"abstract":"The paper emphasis on the simulation of Fuse IC with inbuilt memory element. The fuse IC is designed to prevent damages from external electrical fluctuations. The Fuse IC is integrated with multiple level of fuses which comes action one after another as fuses goes off one by one. The working of Fuse IC is a hybrid characteristics of MCB and wired fuse. The Fuse IC works as wire fuse i.e. the connection breaks in the same manner as for the wire fuse breaks itself when current of more than a specified amount flows through it and, it has a characteristic of MCB as it set itself again in fuse on condition when a fuse goes off after a fluctuations. The Fuse IC is integrated with memory part also in which comprises of flip flops. The memory element used when Main IC suffers, off condition due to the burning of fuse and it suffers power off. In such condition System suffers data lost conditions means the data which is coming to processing purpose to Main IC will be lost due to power drop to Main IC, so for solving this problem lets presume that the delay between switch off to switch on the Main IC after a fluctuation be 1 bit time so after burning of each level 1 flip flop comes in to the working condition to work as memory element.","PeriodicalId":404626,"journal":{"name":"2012 IEEE Business, Engineering & Industrial Applications Colloquium (BEIAC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Business, Engineering & Industrial Applications Colloquium (BEIAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEIAC.2012.6226052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper emphasis on the simulation of Fuse IC with inbuilt memory element. The fuse IC is designed to prevent damages from external electrical fluctuations. The Fuse IC is integrated with multiple level of fuses which comes action one after another as fuses goes off one by one. The working of Fuse IC is a hybrid characteristics of MCB and wired fuse. The Fuse IC works as wire fuse i.e. the connection breaks in the same manner as for the wire fuse breaks itself when current of more than a specified amount flows through it and, it has a characteristic of MCB as it set itself again in fuse on condition when a fuse goes off after a fluctuations. The Fuse IC is integrated with memory part also in which comprises of flip flops. The memory element used when Main IC suffers, off condition due to the burning of fuse and it suffers power off. In such condition System suffers data lost conditions means the data which is coming to processing purpose to Main IC will be lost due to power drop to Main IC, so for solving this problem lets presume that the delay between switch off to switch on the Main IC after a fluctuation be 1 bit time so after burning of each level 1 flip flop comes in to the working condition to work as memory element.