Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

Abstract

Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<>