Simulation of MNOS memory hysteresis - Effect of layer thicknesses

Abstract

MNOS memory hysteresis curves are simulated by integrating the difference of the current via the oxide and nitride layer. The effect of the oxide and nitride thickness as well as the depth of charge centeroid is studied. The results indicate that the optimal oxide thickness is about 2 nm. A thin nitride layer decreases the efficiency of the injected charge. It has been obtained that the possible highest memory window width decreases monotonically with increasing depth of charge centroid.