The interconnect bottleneck in multi-GHz processors; new opportunities for hybrid electrical/optical solutions

A. Cangellaris
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引用次数: 12

Abstract

The semiconductor industry appears to be confident that, even without any major breakthroughs in photolithography, it will be able to achieve device feature sizes in the order of 100 nm by the year 2006. This reduction in feature size implies significantly higher device switching speeds and faster circuits. More specifically, microprocessors with 3 GHz on-chip clock frequency are within reach by the year 2006. The only obstacle to such an impressive level of performance, both across the chip and beyond the chip at the system level, is the availability of an interconnection network of unprecedented complexity and capable of supporting multi-GHz-bandwidth, distortion- and interference-free propagation both on-chip and off-chip. This interconnect bottleneck to multi-GHz processor realization is examined in this paper The emphasis is on the evaluation of the most promising and cost-effective electrical ways of overcoming this bottleneck. It is argued that some of these potential solutions involve technologies that are compatible with on-going developments in optical interconnects. Thus, an opportunity is identified for bringing together electrical and optical interconnect technologies at a level in the integration hierarchy where traditionally optics is considered to be at a disadvantage, namely, at the chip and chip-to-package interconnect level.
多ghz处理器的互连瓶颈电气/光学混合解决方案的新机遇
半导体行业似乎很有信心,即使光刻技术没有任何重大突破,到2006年也能实现100纳米左右的器件特征尺寸。特征尺寸的减小意味着更高的器件切换速度和更快的电路。更具体地说,到2006年,芯片上时钟频率为3ghz的微处理器将触手可及。实现如此令人印象深刻的性能水平的唯一障碍,无论是在芯片上还是在系统层面上,都是前所未有的复杂互连网络的可用性,能够支持多ghz带宽,片内和片外的无失真和无干扰传播。本文研究了多ghz处理器实现的互连瓶颈,重点是评估克服这一瓶颈的最有前途和最具成本效益的电气方法。有人认为,其中一些潜在的解决方案涉及与正在进行的光互连发展兼容的技术。因此,在集成层次结构中,将电气和光学互连技术结合在一起的机会被确定,传统光学被认为处于劣势,即在芯片和芯片到封装的互连级别。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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