Plasma polaritron instability in semiconductor superlattice

A. A. Bulgakov, O.V. Shramkova
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Abstract

The conditions of instability of plasma polaritons in infinite structures, which were derived by a periodic recurrence of two alternating semiconductor layers, was considered. It was assumed that carrier drift takes place. The conditions for the appearance of the instability and its increments of growth were derived.
半导体超晶格中等离子体极电子的不稳定性
考虑了无限结构中等离子体极化子的不稳定条件,该结构是由两个交替半导体层的周期递推得到的。假设载流子漂移发生。导出了不稳定性产生的条件及其增长增量。
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