Photoluminescence Spectral Analysis of GaInAsSb Semiconductor Layers

Abstract

A program was written to simulate the peaks using a combination of the Gaussian and Lorentzian distributions. Each peak was simulated and normalized separately over the entire range and then all the data were added together to produce the final spectra. The fitting parameters used were peak intensity, half width, and wavenumber. In order to identify the origin of the spectral peaks, temperature dependence and incident intensity dependence was analyzed. Subroutines were included in the spectral program evaluating the Bimberg, ShockleyRheed, and Varshni relationships as well as output intensity as a function of input intensity. Error analysis was done using the least-square method. This was performed within the program itself so that the error was calculated for each run. The best fit was then determined by comparing the analytical data to the experimental data and minimizing the error.