Highly Reliable, Cost-effective and Temperature-stable Top-illuminated Avalanche Photodiode (APD) for 100G Inter-Datacenter ER4-Lite Applications

J. Huang, Hsiang-Szu Chang, Y. Jan, H. Chen, C. Ni, Emin Chou, S. K. Lee, Jin-Wei Shi
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引用次数: 5

Abstract

One of the key enablers for 100G ER4-Lite optical modules is 25G APD photodetector that can be employed in 30-40km optical links for inter-datacenter applications. In this paper, we demonstrate that a cost-effective top-illuminated InGaAs/InAlAs APD photodetector can be manufactured to meet stringent IEEE standard of 100G ER4-Lite. The 25G APD shows high bandwidth, high sensitivity with superb temperature stability of breakdown voltage. The APD photodetector also possesses excellent durability against harsh optical and electrical overload in both burst and continuous modes. Robust reliability performance based on aging conditions of 85-175C has also been achieved with an activation energy of 1.18eV.
高可靠性,高性价比和温度稳定的顶照雪崩光电二极管(APD),用于100G数据中心间ER4-Lite应用
100G ER4-Lite光模块的关键推动因素之一是25G APD光电探测器,可用于数据中心间应用的30-40km光链路。在本文中,我们证明了一种具有成本效益的顶部照明InGaAs/InAlAs APD光电探测器可以被制造出来,以满足严格的IEEE 100G ER4-Lite标准。25G APD具有高带宽、高灵敏度和极好的击穿电压温度稳定性。在突发和连续模式下,APD光电探测器还具有出色的耐用性,可抵抗苛刻的光学和电气过载。在85-175的时效条件下,以1.18eV的活化能实现了稳健的可靠性性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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