Ultraviolet metasurface based on highly scattering silicon antennas (Conference Presentation)

Yang Deng, Xi Wang, Zilun Gong, Kaichen Dong, Shuai Lou, Nicolas C. Pégard, Kyle B. Tom, Fuyi Yang, L. Waller, Zheng You, Jie Yao
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Abstract

With signatures of high photon energy and short wavelength, ultraviolet (UV) light enables numerous applications such as high-resolution imaging, photolithography and sensing. In order to manipulate UV light, bulky optics are usually required and thereby do not meet the fast-growing requirements of integration in compact systems. Recently, metasurfaces, with subwavelength or wavelength thicknesses, have shown unprecedented control of light, enabling substantial miniaturization of photonic devices from Terahertz to visible regions. However, material limitations and fabrication challenges have hampered the realization of such functionalities at shorter wavelengths. Herein, we theoretically and experimentally demonstrate that metasurfaces, made of highly scattering silicon (Si) antennas, can be designed and fabricated to manipulate broadband UV light. The metasurface thickness is only one-tenth of the working wavelength, resulting in very small height-to-width aspect ratio (~ 1). Peak conversion efficiency reaches 15% and diffraction efficiency is up to 30%, which are comparable to plasmonic metasurface performances in infrared (IR). A double bar structure is proposed to further improve the metasurface’s diffraction efficiency to close to 100% in transmission mode over a broad UV band. Moreover, for the first time, we show photolithography enabled by metasurface-generated UV holograms. We attribute such performance enhancement to the high scattering cross-sections of Si antennas in the UV range, which is adequately modeled via a circuit. Our new platform will deepen our understanding of light-matter interactions and introduce even more material options to broadband metaphotonic applications, including those in integrated photonics and holographic lithography technologies.
基于高散射硅天线的紫外超表面(会议报告)
凭借高光子能量和短波长的特征,紫外线(UV)光可以实现许多应用,如高分辨率成像,光刻和传感。为了操纵紫外光,通常需要体积庞大的光学元件,因此不能满足紧凑系统中快速增长的集成要求。最近,具有亚波长或波长厚度的超表面显示出前所未有的光控制,使光子器件从太赫兹到可见光区域的实质性小型化。然而,材料的限制和制造方面的挑战阻碍了这种功能在短波长的实现。在此,我们从理论上和实验上证明了由高散射硅(Si)天线制成的超表面可以设计和制造来操纵宽带紫外光。超表面厚度仅为工作波长的十分之一,导致高宽比非常小(~ 1)。峰值转换效率可达15%,衍射效率可达30%,与红外(IR)中的等离子体超表面性能相当。提出了一种双棒结构,进一步提高了超表面的衍射效率,使其在宽紫外波段的透射模式下接近100%。此外,我们首次展示了由超表面生成的UV全息图实现的光刻技术。我们将这种性能增强归因于Si天线在紫外范围内的高散射截面,这是通过电路充分建模的。我们的新平台将加深我们对光-物质相互作用的理解,并为宽带变光子应用引入更多的材料选择,包括集成光子学和全息光刻技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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