A Gated VCO for 10Gb/s PON Systems in 0.18µm CMOS

Gaowei Gu, En Zhu, Ye Lin
{"title":"A Gated VCO for 10Gb/s PON Systems in 0.18µm CMOS","authors":"Gaowei Gu, En Zhu, Ye Lin","doi":"10.1109/ICFN.2010.94","DOIUrl":null,"url":null,"abstract":"A 5GHz Gated VCO for burst-mode operation in 10Gbps GPON and EPON systems is presented. The GVCO consists of four stages of XNOR/XOR cell with voltage-controlled delays, and aligns output clock to burst data within 2 bits time. The GVCO has a tuning range from 4.4GHz to 6.2GHz. The phase noise of the GVCO in steady state circuit is -105dBc/Hz at 5MHz offset. The circuit is implemented in SMIC 0.18µm CMOS process, occupies an area of 425*480µm 2. The power consumption is 35mW (with I/O buffers).","PeriodicalId":185491,"journal":{"name":"2010 Second International Conference on Future Networks","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Second International Conference on Future Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICFN.2010.94","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A 5GHz Gated VCO for burst-mode operation in 10Gbps GPON and EPON systems is presented. The GVCO consists of four stages of XNOR/XOR cell with voltage-controlled delays, and aligns output clock to burst data within 2 bits time. The GVCO has a tuning range from 4.4GHz to 6.2GHz. The phase noise of the GVCO in steady state circuit is -105dBc/Hz at 5MHz offset. The circuit is implemented in SMIC 0.18µm CMOS process, occupies an area of 425*480µm 2. The power consumption is 35mW (with I/O buffers).
用于10Gb/s PON系统的0.18µm CMOS门控压控振荡器
提出了一种适用于10Gbps GPON和EPON系统突发模式工作的5GHz门控压控振荡器。GVCO由四级的XNOR/XOR单元组成,具有压控延迟,并在2位时间内将输出时钟对准突发数据。GVCO的调谐范围从4.4GHz到6.2GHz。稳态电路中GVCO在5MHz偏置时的相位噪声为-105dBc/Hz。该电路采用中芯国际0.18µm CMOS工艺实现,占地面积为425*480µm 2。功耗为35mW(带I/O缓冲器)。
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