Thermal Analysis of ESD Diode in FDSOI Technology using COMSOL Multiphysics

G. Angelov, Boris D. Dobrichkov, J. Liou
{"title":"Thermal Analysis of ESD Diode in FDSOI Technology using COMSOL Multiphysics","authors":"G. Angelov, Boris D. Dobrichkov, J. Liou","doi":"10.1109/ET.2019.8878662","DOIUrl":null,"url":null,"abstract":"Device simulators are well-established tools for behavior prediction of novel electronic structures. However, the developing process for electrostatic discharge (ESD) devices strongly relies on tape-out measurements and adjustments on well-known IPs, rather than on pure TCAD simulation results. Part of the reasons are concerns over accuracy when fast transient events are simulated and high temperatures are reached. This paper provides data on thermal analysis of ESD diode characteristics in fully depleted silicon on insulator (FDSOI) technology using an unorthodox simulation tool – COMSOL Multiphysics.","PeriodicalId":306452,"journal":{"name":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2019.8878662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Device simulators are well-established tools for behavior prediction of novel electronic structures. However, the developing process for electrostatic discharge (ESD) devices strongly relies on tape-out measurements and adjustments on well-known IPs, rather than on pure TCAD simulation results. Part of the reasons are concerns over accuracy when fast transient events are simulated and high temperatures are reached. This paper provides data on thermal analysis of ESD diode characteristics in fully depleted silicon on insulator (FDSOI) technology using an unorthodox simulation tool – COMSOL Multiphysics.
利用COMSOL多物理场分析FDSOI技术中的ESD二极管
器件模拟器是新型电子结构行为预测的成熟工具。然而,静电放电(ESD)器件的开发过程在很大程度上依赖于已知ip的带出测量和调整,而不是纯粹的TCAD模拟结果。部分原因是考虑到模拟快速瞬态事件和达到高温时的准确性。本文提供了使用非正统仿真工具COMSOL Multiphysics对完全耗尽绝缘体上硅(FDSOI)技术中的ESD二极管特性进行热分析的数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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