Vishal Yadav, Savita Kashyap, R. Pandey, Jaya Madan
{"title":"Influence of Absorber Thickness on the Performance of Sb2S3 based Solar Cell using Numerical Simulations","authors":"Vishal Yadav, Savita Kashyap, R. Pandey, Jaya Madan","doi":"10.1109/DELCON57910.2023.10127526","DOIUrl":null,"url":null,"abstract":"Antimony sulphide (Sb<inf>2</inf>S<inf>3</inf>) based solar cells are the promising contender in the photovoltaic (PV) industry owing to non-toxic nature, low cost and availability on earth. In this proposed work, Sb<inf>2</inf>S<inf>3</inf> absorber based PV device is designed and studied through simulation as performed with the help of SCAPS-1D tool. The impact of different thickness variations of Sb<inf>2</inf>S<inf>3</inf> layer is examined and varied from 50 to 500 nm. The designed structure of the proposed device is ITO/ZnO/Zn(O,S):N/SnO<inf>2</inf>/Sb<inf>2</inf>S<inf>3</inf>. The device performance is optimized at 500 nm thickness and obtained higher PV parameters: J<inf>SC</inf> of 17.22 mA/cm<sup>2</sup>, V<inf>OC</inf> of 0.79 V, FF of 58.8% and PCE of 8.04%. The obtained results of this whole study provide new vision for the development of device.","PeriodicalId":193577,"journal":{"name":"2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DELCON57910.2023.10127526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Antimony sulphide (Sb2S3) based solar cells are the promising contender in the photovoltaic (PV) industry owing to non-toxic nature, low cost and availability on earth. In this proposed work, Sb2S3 absorber based PV device is designed and studied through simulation as performed with the help of SCAPS-1D tool. The impact of different thickness variations of Sb2S3 layer is examined and varied from 50 to 500 nm. The designed structure of the proposed device is ITO/ZnO/Zn(O,S):N/SnO2/Sb2S3. The device performance is optimized at 500 nm thickness and obtained higher PV parameters: JSC of 17.22 mA/cm2, VOC of 0.79 V, FF of 58.8% and PCE of 8.04%. The obtained results of this whole study provide new vision for the development of device.
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