Design of a Dual Band Low Noise Amplifier at 1.1GHz and 2.4GHz

Abstract

In this study a dual band low noise amplifier is designed using a very efficient GaAS PHEMT. The proposed design is well matched and simulated with the transmission line methodology. The amplifier delivers a high output power gain of more than 30 dBm maintaining the noise figures of 1.2 and 1.33 dB at operating frequency 1.1 and 2.4 GHz. The device is unconditionally stabilized with stability greater than 4.6 obtaining a high gain of about 30.045 and 30.486 dB at the operating frequencies, with the gain imbalance as low as 0.44 dB. With a good insertion loss of below -45 and with reflection coefficients S11 and S22 below -20 at the operating frequencies the IIP3 and OIP3 parameters are achieved higher than 32 dBm and the output power obtained is 16.36 dBm and 16.175 dBm at 1.1 GHz and 2.4 GHz respectively.