High frequency, single/dual phases, large AC/DC signal power characterization for two phase on-silicon coupled inductors

C. Femandez, Z. Pavlović, S. Kulkami, P. McCloskey, C. O'Mathúna
{"title":"High frequency, single/dual phases, large AC/DC signal power characterization for two phase on-silicon coupled inductors","authors":"C. Femandez, Z. Pavlović, S. Kulkami, P. McCloskey, C. O'Mathúna","doi":"10.1109/APEC.2017.7931048","DOIUrl":null,"url":null,"abstract":"In this work, a new set-up is presented to characterize the large signal electrical parameters of on-Silicon integrated coupled inductors for Power Supply on Chip. The proposed system is suitable to perform the measurements under different large-signal test conditions given by the dc bias current up to 2 A and ac current through one or both windings, with amplitudes ranging from 0 A to 0.5 A at frequencies up to 120 MHz. Since a key issue when measuring at high-frequencies is the error due to the attenuation and time skew between the channels, an additional test is performed to characterize the measurement system and compensate the voltage and current waveforms.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2017.7931048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

In this work, a new set-up is presented to characterize the large signal electrical parameters of on-Silicon integrated coupled inductors for Power Supply on Chip. The proposed system is suitable to perform the measurements under different large-signal test conditions given by the dc bias current up to 2 A and ac current through one or both windings, with amplitudes ranging from 0 A to 0.5 A at frequencies up to 120 MHz. Since a key issue when measuring at high-frequencies is the error due to the attenuation and time skew between the channels, an additional test is performed to characterize the measurement system and compensate the voltage and current waveforms.
两相硅耦合电感的高频、单/双相、大交流/直流信号功率特性
在这项工作中,提出了一种新的装置来表征片上电源中硅集成耦合电感的大信号电学参数。该系统适用于在不同的大信号测试条件下进行测量,其中直流偏置电流高达2 A,交流电流通过一个或两个绕组,振幅范围为0 A至0.5 A,频率高达120 MHz。由于在高频测量时的一个关键问题是由于通道之间的衰减和时间倾斜引起的误差,因此需要进行额外的测试来表征测量系统并补偿电压和电流波形。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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