A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design

He Cheng, Chao Zhang, Tiefeng Liu, C. Xie, Zhjia Yang, Zhipeng Zhang
{"title":"A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design","authors":"He Cheng, Chao Zhang, Tiefeng Liu, C. Xie, Zhjia Yang, Zhipeng Zhang","doi":"10.1109/ISCTIS51085.2021.00078","DOIUrl":null,"url":null,"abstract":"One numerical compact model for one-dimensional electron charge density of n-type silicon ballistic nanowire gate-all-around metal-oxide-semiconductor field-effect transistors with ultra-short channel incorporating the source-drain tunneling is proposed. When establishing the AC model in practical device applications, compact models describing transient analysis of the carrier behaviors in the device channel are needed. When focusing on the charge density of carriers within GAA MOSFET devices, carriers transporting along the channel direction induced by the source-drain tunneling effect should also be taken into account in the subthreshold region. In this study, transmission coefficients of the source-drain tunneling effect are evaluated through expressing energy level of the lowest subband with bringing in the exact boundary conditions and using the Wentzel-Kramers-Brillouin approximation. Then, the carrier density can be derived from the charge profile in the channel using quantum statistics theory. Finally, comparisons of the calculations of the carrier densities between the source-drain tunneling and the thermionic modes in ballistic transport are demonstrated.","PeriodicalId":403102,"journal":{"name":"2021 International Symposium on Computer Technology and Information Science (ISCTIS)","volume":"31 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Symposium on Computer Technology and Information Science (ISCTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCTIS51085.2021.00078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

One numerical compact model for one-dimensional electron charge density of n-type silicon ballistic nanowire gate-all-around metal-oxide-semiconductor field-effect transistors with ultra-short channel incorporating the source-drain tunneling is proposed. When establishing the AC model in practical device applications, compact models describing transient analysis of the carrier behaviors in the device channel are needed. When focusing on the charge density of carriers within GAA MOSFET devices, carriers transporting along the channel direction induced by the source-drain tunneling effect should also be taken into account in the subthreshold region. In this study, transmission coefficients of the source-drain tunneling effect are evaluated through expressing energy level of the lowest subband with bringing in the exact boundary conditions and using the Wentzel-Kramers-Brillouin approximation. Then, the carrier density can be derived from the charge profile in the channel using quantum statistics theory. Finally, comparisons of the calculations of the carrier densities between the source-drain tunneling and the thermionic modes in ballistic transport are demonstrated.
集成电路设计中考虑源驱动隧道效应的硅-纳米线GAA MOSFET电荷密度模型
提出了一种考虑源漏隧道作用的n型硅弹道纳米线栅-全金属氧化物半导体场效应晶体管一维电子电荷密度的紧凑数值模型。在实际设备应用中建立交流模型时,需要使用紧凑的模型来描述设备信道中载波行为的瞬态分析。在关注GAA MOSFET器件内载流子的电荷密度时,在亚阈值区域还应考虑由源漏隧穿效应诱导的沿通道方向输运的载流子。本研究引入精确边界条件,利用wentzel - kramer - brillouin近似,通过表示最低子带能级来计算源漏隧穿效应的透射系数。然后,利用量子统计理论可以从通道中的电荷分布推导出载流子密度。最后,比较了源漏隧道和热离子模式在弹道输运中载流子密度的计算结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信