Comparative Analysis of Memristor based Synaptic Circuits for Neuromorphic Architectures

R. Budhathoki
{"title":"Comparative Analysis of Memristor based Synaptic Circuits for Neuromorphic Architectures","authors":"R. Budhathoki","doi":"10.3126/SCITECH.V13I1.23499","DOIUrl":null,"url":null,"abstract":"Memristor is one of the fundamental electrical elements, which has recently been successfully built. Memristor is being used extensively as synapses in neuromorphic applications. A common method for developing memristor based synaptic circuits is to store synaptic weight values within memristors as resistance values. It requires use of the continuous resistance (memristance) range available in the memristors to store the weights. In this paper, we study how different compact synaptic circuits implemented using Ti02 memristors to perform zero, negative, and positive synaptic weightings. Results of different memristor based circuits, based on pulsed input signals, are compared, analyzed and presented using Ti02 memristors via simulations.","PeriodicalId":183221,"journal":{"name":"SCITECH Nepal","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SCITECH Nepal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3126/SCITECH.V13I1.23499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Memristor is one of the fundamental electrical elements, which has recently been successfully built. Memristor is being used extensively as synapses in neuromorphic applications. A common method for developing memristor based synaptic circuits is to store synaptic weight values within memristors as resistance values. It requires use of the continuous resistance (memristance) range available in the memristors to store the weights. In this paper, we study how different compact synaptic circuits implemented using Ti02 memristors to perform zero, negative, and positive synaptic weightings. Results of different memristor based circuits, based on pulsed input signals, are compared, analyzed and presented using Ti02 memristors via simulations.
神经形态结构中基于忆阻器的突触电路的比较分析
忆阻器是近年来研制成功的一种基本电元件。忆阻器在神经形态学中被广泛应用于突触。开发基于忆阻器的突触电路的一种常用方法是将突触权重值作为电阻值存储在忆阻器中。它需要使用在忆阻器中可用的连续电阻(忆阻)范围来存储权重。在本文中,我们研究了如何使用tio2忆阻器实现不同的紧凑突触电路来执行零、负和正突触加权。利用tio2忆阻器对脉冲输入信号的不同忆阻电路进行了仿真比较、分析和展示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信