{"title":"Proposal for a high bandwidth, energy-efficient and tunable visible light receiver structure","authors":"Mircea Catuneanu, Seyedreza Hosseini, K. Jamshidi","doi":"10.1109/PHOSST.2016.7548714","DOIUrl":null,"url":null,"abstract":"A visible light photodiode with enhanced bandwidth is proposed in a CMOS compatible silicon on insulator platform. By depositing a thick oxide and a thin silicon nitride layer and proper patterning of nitride, collected power can be significantly enhanced.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2016.7548714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A visible light photodiode with enhanced bandwidth is proposed in a CMOS compatible silicon on insulator platform. By depositing a thick oxide and a thin silicon nitride layer and proper patterning of nitride, collected power can be significantly enhanced.