Tandem InGaN/GaN light-emitting diodes

2015 IEEE Photonics Conference (IPC) Pub Date : 2015-11-12 DOI:10.1109/IPCON.2015.7323507

B. Zhu, Wei Liu, Zi-hui Zhang, Swee Tiam Tan, X. W. Sun, H. Demir

引用次数: 0

Abstract

Tandem LEDs in which active regions are connected by tunnel junctions show extraordinary efficiency improvement when compared with traditional LEDs and this is explained by relatively reduced forward voltage and more uniform carrier distribution.

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串联InGaN/GaN发光二极管

与传统led相比，主动区通过隧道结连接的串联led显示出非凡的效率提高，这是由于相对降低的正向电压和更均匀的载流子分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE Photonics Conference (IPC)

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