A 20.7% PAE 3-Stage 60GHz Power Amplifier for Radar Applications in 28nm Bulk CMOS

Abstract

This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for short range radar applications, realized in a 28nm bulk CMOS technology. Measurement results show a saturated output power $(\mathrm{P}_{sat})$ of 11.9dBm with a 20.7% power-added efficiency (PAE) at 60GHz. Moreover, the measurements show that for a frequency range from 57GHz to 64GHz, the Psat varies from 10.5dBm to 11.2dBm and the circuit draws 26mA from a 0.9V power supply. Furthermore, the fabricated chip has an area of 0.61mm x 0.31mm including the pads.