Thermal Annealing of Total Ionizing Dose Effect for Partially-Depleted SOI MOSFET

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857715

C. Peng, Z. Lei, Zhangang Zhang, Yujuan He, Yun Huang, Y. En

引用次数: 0

Abstract

A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.

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部分耗尽SOI MOSFET总电离剂量效应的热退火

提出了一种用于130nm PDSOI技术的浅沟槽隔离氧化物辐射硬化工艺。研究了PDSOI nMOSFET辐照后的TID效应和高温退火效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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