Analysis of MOSFET operating in half-wave zero-current switching quasi-resonant converter

N. Goryashin, A. S. Solomatova
{"title":"Analysis of MOSFET operating in half-wave zero-current switching quasi-resonant converter","authors":"N. Goryashin, A. S. Solomatova","doi":"10.1109/EDM.2012.6310251","DOIUrl":null,"url":null,"abstract":"In this paper the analysis of bidirectional switch based on two MOSFETs operating as switching element in zero-current switching half wave quasi-resonant buck converter is carried out. The influence of MOSFETs output parasitic capacitance together with resonant tank inductor on conduction power loss in switching element is found due to the proposed analytical model. The condition to provide minimal conduction losses in switching MOSFET is obtained. All theoretical results are proved experimentally.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2012.6310251","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In this paper the analysis of bidirectional switch based on two MOSFETs operating as switching element in zero-current switching half wave quasi-resonant buck converter is carried out. The influence of MOSFETs output parasitic capacitance together with resonant tank inductor on conduction power loss in switching element is found due to the proposed analytical model. The condition to provide minimal conduction losses in switching MOSFET is obtained. All theoretical results are proved experimentally.
半波零电流开关准谐振变换器中MOSFET的工作分析
本文对零电流开关半波准谐振降压变换器中基于两个mosfet作为开关元件的双向开关进行了分析。根据所建立的分析模型,发现了mosfet输出寄生电容和谐振槽电感对开关元件导通功率损耗的影响。得到了在开关MOSFET中提供最小导通损耗的条件。所有的理论结果都得到了实验的证实。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信