Design and characterization of a new GaN / AlGaN HEMT Transistor

Abstract

In this research work, we designed and discussed a structure of high electron mobility transistor based on Gallium Nitride HEMT GaN size. To achieve this, we have designed an original two-dimensional architecture composed of COMSOL Multi-physics software. The model developed in this work is characterized by their very small geometrical size 0.52 $\mu \mathrm{m}\times 1\mu \mathrm{m}$ with a gate width $L_{g}=0.24\mu \mathrm{m}$. It is standardized and it meets the need for the operation of a microcircuit with a very low power dissipation up to 3.3 mW with a large value of maximum current 0.33 mA, a threshold voltage $V_{TH}=3\mathrm{V}$ and a trans-conductance $G_{m}=0.1$ ms. In addition, this model of AlGaN/GaN HEMT transistor shows a good result of electrical simulation with a convergence behavior with higher gate voltages $(V_{gs}=5\mathrm{V})$. In addition, this prototype has proven its ability to withstand the impact of the thermal effect on the DC behavior of the transistor for a temperature up to over $225^{\circ}\mathrm{C}$ despite their small size. The results obtained were presented, discussed and affirmed by those of the existing data. We conclude on the proposed model and the prospects of such a technology for switching applications.