Effect of SiC schottky and Si junction diode reverse recovery on boost converter

Abstract

The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power- factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1S60, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.