{"title":"An observation of large and long current pulses below the breakdown voltage of PIN diode","authors":"I. Takata","doi":"10.1109/ISPSD.1996.509476","DOIUrl":null,"url":null,"abstract":"PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.