An observation of large and long current pulses below the breakdown voltage of PIN diode

I. Takata
{"title":"An observation of large and long current pulses below the breakdown voltage of PIN diode","authors":"I. Takata","doi":"10.1109/ISPSD.1996.509476","DOIUrl":null,"url":null,"abstract":"PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

PIN diodes with high resistive n-layer exhibit very interesting pulses, whose lengths are 10 /spl mu/s-2 s and heights are 0.001/spl sim/0.25 A/cm/sup 2/ below and above the avalanche breakdown voltage (/spl ap/1400 V). Especially, large pulses (0.1/spl sim/0.25 A/cm/sup 2/) occurred at /spl ap/100 V lower voltage than the avalanche breakdown. In these operations, breakdown currents prefer some discrete values not depending on the applied voltage directly. To consider these phenomena, the author proposes a new idea that there was a stable high current density operation (1A/cm/sup 2/ order) near the avalanche breakdown voltage.
PIN二极管击穿电压以下大且长电流脉冲的观察
高阻n层PIN二极管的脉冲长度为10 /spl μ m/s - 2s,高度为0.001/spl sim/0.25 A/cm/sup 2/,低于和高于雪崩击穿电压(/spl ap/1400 V),特别是在低于雪崩击穿电压(/spl ap/100 V)的情况下,产生了大脉冲(0.1/spl sim/0.25 A/cm/sup 2/)。在这些操作中,击穿电流倾向于一些不直接依赖于施加电压的离散值。考虑到这些现象,作者提出了在雪崩击穿电压附近存在稳定的高电流密度工作(1A/cm/sup 2/阶)的新观点。
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