High Efficiency Inverted Quantum-dot LED

Abstract

This paper reviews the performances of high efficiency quantum-dot light emitting diodes (QLEDs) for displays, such as external quantum efficiency (EQE), current efficiency (CE) and power efficiency (PE). The device structures and materials for hole and electron transport layers are also discussed. Especially, we have developed a new electron transport layer (ETL) of doped ZnO material. Using the ETL we have developed the inverted red (R-), green (G-) and blue (B-) QLEDs exhibiting the maximum current efficiencies of 20.3, 79.2 and 0.4 cd/A, respectively.