An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications

Abstract

The design, implementation, and test results of a simple GaAs MMIC transimpedance amplifier with enhanced performance for high-speed optical communications is described. A cascode configuration, improved in terms of bandwidth and noise, was used. On-wafer and on-carrier measurements showed close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption were obtained. The temperature and bias point sensitivity were negligible. The electrical results were very close to the theoretical limits of the structure.<>