Terahertz sources and detectors based on nonlinear diodes

Abstract

The terahertz frequency band, spanning from roughly 100 GHz to 10 THz, is the most scientifically rich, unexplored region of electromagnetic spectrum. This frequency band is useful for scientific, military and commercial applications as the microwave and far-infrared bands. The aim of this paper is to build sources and detectors that span the entire terahertz technology gap. This has primarily been achieved through the use of nonlinear diodes to extend microwave functionality to high frequencies. GaAs is the material of choice for the nonlinear diodes because of its high electron mobility. Here the voltages, currents and their effect on the electrons in the microwave frequency devices are also considered.