A. Youvanidha, B. Vidhya, P. Nelson, R. Kannan, S. Babu
{"title":"Investigation on the structural, optical and electrical properties of ZnO-Y2O3 (YZO) thin films prepared by PLD for TCO layer applications","authors":"A. Youvanidha, B. Vidhya, P. Nelson, R. Kannan, S. Babu","doi":"10.1063/1.5131610","DOIUrl":null,"url":null,"abstract":"Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.","PeriodicalId":435771,"journal":{"name":"INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"INTERNATIONAL CONFERENCE ON INVENTIVE MATERIAL SCIENCE APPLICATIONS : ICIMA 2019","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5131610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.Zinc Oxide is a prominent wide bandgap material with an appreciable transparency which is widely utilized in transparent conducting oxide applications. However, metal doping on ZnO reports were extensively investigated for tuning the electrical p roperties. This article is focused on pulsed laser deposition of ZnO-Y2O3 (YZO) thin films with various concentrations of Y2O3 (0-5%) as a dopant in ZnO. X-ray diffraction spectrum of the YZO thin films exhibit s the presence of hexagonal wurtzite structure with a preferential orientation along the (002) plane. M orphology aspects of the film abides with XRD results which shown a uniform distribution till 2 wt% and displayed a gain in grain growth with increasing wt% of Y2O3. The influence of Y2O3 concentration on the optical transmittance of ZnO is investigated by Uv- Vis spectroscopy. The electrical resistivity of the deposited films is in the order ∼10−4 which was on par with the earlier reports suitable for TCO applications.