Studying the Barrier Quality of ALD Oxide Layers

Heike Wünscher, Ingo Tobehn-Steinhäuser, T. Frank, K. Neckermann, T. Ortlepp
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Abstract

The usage of an electrical device in an aqueous medium requires a sealing which keeps the water and the ionic components out of the isolation. Thus, the quality of a passivation does not only depend on the chemical inertness and the bulk resistance of a material, but also on the extent of material transfer through the passivation layers. Impedance spectroscopy belongs to the best techniques to qualify this property. However, in many cases the knowledge of an equivalent circuit and a parameter fit are necessary, sometimes leading to ambiguous results. To circumvent these difficulties an alternative concept has been evaluated. Theoretical investigations of Bisquert et al. propose that mass transfer into a sealing layer can also be indicated by the Nyquist plot in the electrical impedance spectroscopy (EIS). A parameter fit could therefore be omitted. To evaluate this approach several oxide films on comb electrodes have been investigated. The studies include aluminum, titanium and tantalum oxides which were deposited using atomic layer deposition (ALD). The influence of the film thickness and process temperature were investigated. The results indicate that a significant transfer of ionic species occurs in all cases.
ALD氧化层阻隔性研究
在含水介质中使用电气装置需要密封,使水和离子组分不受隔离。因此,钝化的质量不仅取决于材料的化学惰性和体积电阻,还取决于材料通过钝化层转移的程度。阻抗谱是检验这一性质的最佳技术。然而,在许多情况下,等效电路的知识和参数拟合是必要的,有时会导致模棱两可的结果。为了克服这些困难,已经评估了另一种概念。Bisquert等人的理论研究表明,通过电阻抗谱(EIS)中的Nyquist图也可以表示密封层中的传质。因此可以省略参数拟合。为了评价这种方法,研究了梳状电极上的几种氧化膜。研究了采用原子层沉积法(ALD)沉积铝、钛和钽的氧化物。考察了膜厚和工艺温度对其性能的影响。结果表明,在所有的情况下都发生了显著的离子转移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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