3d遷移金属置換Bi(Pb)2212単結晶の磁束ピンニング特性

雅直 重森, 智史 内田, 滋 堀井, 淳一 下山, 光二 岸尾
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Abstract

A large amount of lead doping to Bi2212 superconductors is effective in decreasing their high electromagnetic anisotropy and introduces effective pinning sites, such as lamella structure interfaces due to compositional fluctuation of lead ions, resulting in greatly enhanced flux pinning properties up to high temperatures. Particularly in the high-Tc superconducting materials with lowered anisotropy, further improvement of critical current properties can be expected by doping a small amount of impurity elements, which generate locally weak superconducting regions. Based on this background, we have attempted to enhance flux pinning strength of Bi(Pb)2212 single crystals by 3d metal doping in the present study. Crystal boules with starting compositions of Bi1.6Pb0.6Sr1.8Ca(Cu1-xMx)2Oy (M = Fe, Co, Ni : x = 0, 0.001, 0.002, 0.005, 0.02) were grown by the floating zone method. Tc's of the single crystals annealed to be the carrier overdoped state were dramatically decreased with an increase of metal doping levels. Critical current performance of the 3d metal-doped Bi(Pb)2212 crystals was quite poor at high temperatures near Tc, The crystal with x= 0.001, 0.002, 0.005, however, showed improved Jc properties accompanied by larger second peak effects in their magnetization hysteresis loops when compared with the 3d metal free Bi(Pb)2212 crystal below 50 K. On the other hand, magneto-optical measurements revealed that anisotropy in the in-plane Jc properties (Jca > Jcb ) was systematically suppressed with an increase of the doping level x. These results suggested that a very small amount of 3d metal doping is an essentially effective method to enhance pinning strength of Bi-based superconductors due to their generation of point-defect-like pinning centers. 3d doping, however, does decrease the pinning strength at the lamella structure interfaces.
3d过渡金属置换Bi(Pb)2212单晶体的磁通引针特性
在Bi2212超导体中大量掺杂铅可以有效地降低其高电磁各向异性,并引入有效的钉钉位点,如由于铅离子成分波动导致的片层结构界面,从而大大增强了高温下的通量钉钉性能。特别是在各向异性较低的高tc超导材料中,通过掺杂少量杂质元素,可以进一步改善临界电流性能,从而产生局部弱超导区。在此背景下,本研究试图通过三维金属掺杂来提高Bi(Pb)2212单晶的磁通钉接强度。用浮区法生长起始成分为Bi1.6Pb0.6Sr1.8Ca(Cu1-xMx)2Oy (M = Fe, Co, Ni: x = 0, 0.001, 0.002, 0.005, 0.02)的晶体。随着金属掺杂水平的增加,单晶退火后的载流子过掺杂态的Tc显著降低。3d金属掺杂Bi(Pb)2212晶体在Tc附近的高温下临界电流性能较差,而x= 0.001、0.002、0.005的晶体在50 K以下的磁化磁滞回线中具有较大的第二峰效应,其Jc性能得到改善。另一方面,磁光测量结果表明,随着掺杂水平x的增加,平面内Jc性质的各向异性(Jca > Jcb)被系统地抑制。这些结果表明,极少量的三维金属掺杂是提高铋基超导体钉钉强度的有效方法,因为它们会产生点缺陷状钉钉中心。然而,三维掺杂确实降低了片层结构界面处的钉钉强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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