28-nm Bulk and FDSOI Cryogenic MOSFET : (Invited Paper)

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706117

A. Beckers, F. Jazaeri, C. Enz

引用次数: 5

Abstract

This paper presents an intensive overview of the characterization and modeling of advanced 28-nm bulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.

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28纳米体积和FDSOI低温MOSFET:(特邀论文)

本文对先进的28纳米体和FDSOI CMOS工艺的表征和建模进行了深入的概述，这些工艺在室温到深低温下连续工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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