A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS

Haikun Jia, W. Deng, Pingda Guan, Zhihua Wang, B. Chi
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引用次数: 10

Abstract

The recent development of the 5th-generation (5G) communication sytems has set increasingly strict requirements on the spectral purity of millimeter-wave (mm-wave) local oscillators (LO). Low phase noise is crucial to enable advanced modulation formats for high communication data-rates. Much effort has been made to improve the phase noise performance of the mm-wave LOs. A lower frequency voltage-controlled oscillator (VCO) together with a frequency multiplier can lower the phase noise [1]; however, the high-order harmonic components in VCOs are usually very weak, which requires additional power-consuming mm-wave amplification stages to satisfy the LO swing requirement. For single mm-wave fundamental VCOs, the minimal achievable phase noise is bounded by the smallest realizable inductor that displays a high Q factor. To avoid the “small inductor” problem, N oscillators with relatively large inductors can be coupled together to improve the phase noise by $10\log _{10}(\mathrm{N})[2 -5]$. Authors in [2] presented a quad-core bipolar VCO working around 15GHz as shown in Fig. 20.3.1 (Left), where four one-turn inductors are star-connected with the active cores placed in the middle. Resistors (Rc) are added to avoid undesired multi-tone concurrent oscillations. However, the four one-turn inductors still suffer from the Q-factor drop when the inductance decreases, thus limiting the highest achievable oscillation frequency. Besides, $\mathrm{V}_{DD}$ at the inductor central taps and $\mathrm{V}_{SS}$ at the tail current source are far from each other, making the $\mathrm{V}_{DD}- \mathrm{V}_{SS}$ current return path long. This path has to be carefully modeled in simulations, especially in the mm-wave frequency range, where the return path inductance is comparable to the tank inductance. Instead of the star-connected topology, authors in [3] presented a circular-connected quad-core VCO working close to 30GHz, where the inductors are arranged in a circular topology as shown in Fig. 20.3.1 (Middle). The destructive coupling between the inner edges inside a small inductor is eliminated. Therefore, the minimal realizable inductance is further reduced while keeping a high Q factor. The central taps are connected by narrow metal traces to avoid latching and mode ambiguity. The VCO adopts a CMOS configuration, which limits the highest operating frequency. It would be difficult for this topology to be adopted in NMOS-only VCOs because the central taps have to be resistively isolated to suppress unwanted modes; therefore, they cannot be connected to the AC-ground power supply simultaneously as required by the NMOS-only configuration. Due to the lack of harmonic impedance control in the circular inductors, extra tail filtering transformers are added to improve the phase noise.
基于环形三耦变压器的60GHz 186.5dBc/Hz四核FoM基频压控振荡器
随着第五代通信系统(5G)的发展,对毫米波本振(LO)的频谱纯度提出了越来越严格的要求。低相位噪声对于实现高通信数据速率的高级调制格式至关重要。为了提高毫米波LOs的相位噪声性能,人们做了大量的工作。低频压控振荡器(VCO)和倍频器可以降低相位噪声[1];然而,压控振荡器中的高次谐波分量通常非常微弱,这需要额外的功耗毫米波放大级来满足本振摆幅的要求。对于单毫米波基态压控振荡器,最小可实现相位噪声由显示高Q因子的最小可实现电感器限定。为了避免“小电感”问题,可以将N个具有较大电感的振荡器耦合在一起,从而将相位噪声提高$10\log _{10}(\mathrm{N})[2 -5]$。[2]中的作者提出了一种工作在15GHz左右的四核双极压控振荡器,如图20.3.1(左)所示,其中四个单匝电感星形连接,有源磁芯位于中间。电阻(Rc)的增加,以避免不必要的多音并发振荡。然而,当电感减小时,4个单匝电感仍然受到q因子下降的影响,从而限制了可达到的最高振荡频率。此外,电感器中心抽头处的$\mathrm{V}_{DD}$与尾电流源处的$\mathrm{V}_{SS}$相距较远,使得$\mathrm{V}_{DD}- \mathrm{V}_{SS}$电流返回路径较长。这条路径必须在模拟中仔细建模,特别是在毫米波频率范围内,其中返回路径电感与坦克电感相当。与星形连接拓扑不同,[3]中的作者提出了一种工作在30GHz附近的圆连接四核VCO,其中电感器排列成圆形拓扑,如图20.3.1(中)所示。消除了小型电感器内部边缘之间的破坏性耦合。因此,在保持高Q因数的同时,可实现的最小电感进一步减小。中央抽头由狭窄的金属线连接,以避免闭锁和模式模糊。VCO采用CMOS配置,限制最高工作频率。这种拓扑结构很难用于仅nmos的vco,因为中心抽头必须电阻隔离以抑制不需要的模式;因此,不能同时接入交流接地电源,这是nmos专用配置的要求。由于环形电感缺乏谐波阻抗控制,增加了额外的尾滤波变压器以改善相位噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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