Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture

Abstract

The paper deals with electrical characterization of nanocrystalline diamond / p- type crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.