GaAs pHEMT Traveling Wave Amplifiers up to 50 GHz

Abstract

The article presents the results of the development of two ultra-wideband traveling wave amplifiers. These monolithic microwave integrated circuits (MMICs) were developed using gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) technology. One was designed based on a 0.25 $\mu$m GaAs pHEMT process with gain up to 30 GHz, and the other based on a 0.1 $\mu$m GaAs pHEMT process up to 50 GHz. The measured S-parameters for the first MMIC show a gain (S21) of 15±1.5dB in the frequency range 0-30 GHz, input and output return loss (S11, S22) less than -11dB. The measured S-parameters for the second MMIC show a gain of more than 11.5 dB in the frequency range of 0-50 GHz, input and output return loss of less than -9dB.