InGaAsP/InGaAs Quantum Well Lasers using Hollow Square Microcavities

H. Moon, You-Yong Jin, K. Hyun, Yong-Hwan Kwon
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Abstract

We investigated semiconductor lasers using hollow square microcavities with various corner shapes. For hollow square cavities with 45deg-tilted or convex-shaped corners, the ring-type WGMs originating total reflection of light at 4 corners were lased. While the lasing modes from a hollow cavity with concave-shaped asymmetric corners were 12 bounce guided modes originating total reflection at both (inner and outer) flat boundaries. We confirmed the lasing of guided modes by analyzing reduced mode spacing. The quality factor was smaller than that of ring-type WGMs due to the enhanced reflection loss
使用方形空心微腔的InGaAsP/InGaAs量子阱激光器
我们研究了具有不同角形的空心方形微腔的半导体激光器。对于角为45度倾斜或凸形的空心方腔,在4个角处产生全反射光的环形WGMs被激光照射。而从具有凹形不对称角的中空腔中发出的激光模式为12个弹跳引导模式,在(内外)平面边界处产生全反射。通过分析减小模间距,确定了导模的激光效应。由于反射损耗增大,质量因子小于环型wgm
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