2.45 GHz Energy Harvesting On-chip Rectenna in $0.18\ \mu \mathrm{m}$ RF CMOS Process

Abstract

A fully integrated on-chip rectenna operating at 2.45 GHz is designed in standard $0.18\ \boldsymbol{\mu}\mathbf{m}$ technology RF CMOS process. The rectenna circuit is based on complex conjugate impedance matching technique of antenna with rectifier. A miniaturized planar antenna is inductively coupled to a self-threshold voltage (Vth) reduction type rectifier. At a distance of 10 cm from any RF source with an effective isotropic radiated power (EIRP) of 36 dBm, the rectenna provides a rectified DC voltage of 1 V with a power conversion efficiency (PCE) of 50% for −14 dBm input power. Given the ample generated DC power and GHz frequency range of operation, this on chip rectenna is suitable for miniaturized, low cost, and battery-less implantable electronics and RFID tags.