1.5 ppm/°C nano-Watt resistorless MOS-only voltage reference

C. JhonA.Gomez, H. Klimach, E. Fabris, S. Bampi
{"title":"1.5 ppm/°C nano-Watt resistorless MOS-only voltage reference","authors":"C. JhonA.Gomez, H. Klimach, E. Fabris, S. Bampi","doi":"10.1109/LASCAS.2016.7451019","DOIUrl":null,"url":null,"abstract":"This paper presents a MOS-only high power supply rejection (PSRR) voltage reference with a very low temperature coefficient (TC) that consumes only tens of nano-Watt. It is composed by a threshold voltage monitor circuit with no resistors, cascaded with a thermal voltage generator, adequate for fabrication in standard processes. Since the MOS transistors operate in subthreshold and near-threshold regimes the current consumption is very low. The operation of the circuit is analytically described and a design methodology is proposed. Post-layout simulations for a design in a 130 nm CMOS process are presented, resulting a reference voltage around 670 mV with a best case TC of 1.5 ppm/°C for the -40 to +125 °C range and an average TC of 20 ppm/°C over process variations, untrimmed. A very low sensitivity to VDD is achieved, resulting a PSRR lower than -71 dB at 100 Hz and a line sensitivity (LS) lower than 576 ppm/V for a supply range from 1 to 3 V. The area is very small, 0.0084 mm2 including the start-up stage.","PeriodicalId":129875,"journal":{"name":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2016.7451019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

This paper presents a MOS-only high power supply rejection (PSRR) voltage reference with a very low temperature coefficient (TC) that consumes only tens of nano-Watt. It is composed by a threshold voltage monitor circuit with no resistors, cascaded with a thermal voltage generator, adequate for fabrication in standard processes. Since the MOS transistors operate in subthreshold and near-threshold regimes the current consumption is very low. The operation of the circuit is analytically described and a design methodology is proposed. Post-layout simulations for a design in a 130 nm CMOS process are presented, resulting a reference voltage around 670 mV with a best case TC of 1.5 ppm/°C for the -40 to +125 °C range and an average TC of 20 ppm/°C over process variations, untrimmed. A very low sensitivity to VDD is achieved, resulting a PSRR lower than -71 dB at 100 Hz and a line sensitivity (LS) lower than 576 ppm/V for a supply range from 1 to 3 V. The area is very small, 0.0084 mm2 including the start-up stage.
1.5 ppm/°C纳米瓦无电阻mos唯一电压参考
本文提出了一种温度系数极低、功耗仅为几十纳瓦的mos型高电源抑制(PSRR)基准电压。它由一个没有电阻的阈值电压监测电路组成,与一个热电压发生器级联,足以在标准工艺中制造。由于MOS晶体管在亚阈值和近阈值状态下工作,电流消耗非常低。对电路的工作原理进行了分析描述,并提出了一种设计方法。提出了一种130 nm CMOS工艺设计的布局后仿真,结果显示参考电压约为670 mV,在-40至+125°C范围内,最佳情况下TC为1.5 ppm/°C,在未调整的情况下,工艺变化的平均TC为20 ppm/°C。对VDD的灵敏度非常低,因此在100 Hz时PSRR低于-71 dB,在1至3 V的电源范围内,线路灵敏度(LS)低于576ppm /V。面积非常小,0.0084 mm2,包括启动阶段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信