1-V 13-GHz ultra low noise amplifier for system-on-a-chip radiometer in CMOS 90 nm

A. Fonte, D. Zito
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引用次数: 0

Abstract

An ultra-low noise amplifier (LNA) of a fully integrated microwave radiometer on silicon at 13 GHz for the civil and environmental safeguard is presented. The LNA represents the front-end stage of the radiometric sensor, which consists of an ultra-low noise receiver characterized by high performance in terms of sensitivity and gain stability. The LNA is realized by means of two cascode stages coupled each other by a transformer-based inter-stage matching network and provides differential outputs from single-ended input signal available from the antenna. The LNA exhibits a noise figure of 1.4 dB, a power gain of 20 dB and a power consumption of 12 mA with a supply voltage of 1 V, which represent one of the best set of performance among those presented in the literature.
1-V 13ghz超低噪声放大器,用于90纳米CMOS片上系统辐射计
介绍了一种用于民用和环保的13 GHz硅基全集成微波辐射计的超低噪声放大器。LNA代表了辐射传感器的前端,它由一个超低噪声接收器组成,在灵敏度和增益稳定性方面具有高性能。LNA通过基于变压器的级间匹配网络实现两个级级耦合,并从天线提供单端输入信号的差分输出。该LNA的噪声系数为1.4 dB,功率增益为20 dB,电源电压为1 V时功耗为12 mA,是目前文献中性能最好的LNA之一。
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