Characterization of band offset in α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructures

Abstract

Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga₂O₃) and α-(Al_xGa_1-x)₂O₃/ α-Ga₂O₃ heterostructure devices. We prepared α-(Al_xGa_1-x)₂O₃ alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga₂O₃/α-(Al_xGa_1-x)₂O₃ heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The band alignment was estimated to be type I with very narrow valence-band offset energy.