A 1.2V 57mW mobile ISDB-T SoC in 90nm CMOS

2009 IEEE Asian Solid-State Circuits Conference Pub Date : 2009-12-22 DOI:10.1109/ASSCC.2009.5357166

Jeong-Cheol Lee, Myung-woon Hwang, Seokyong Hong, Moonkyung Ahn, S. Jeong, Y. Oh, Seungbum Lim, Hyunha Cho, Je-cheol Moon, Jong-Ryul Lee, Sangwoo Han, Che Handa, T. Fujie, Katsuya Hashimoto, Kengo Tamukai

引用次数: 5

Abstract

This paper presents a 1.2 V 57 mW SoC using a 90 nm CMOS process in mobile ISDB-T application. This achieves −98.5 dBm sensitivity at QPSK, CR = −2/3 with 2.5 dB NF of RF tuner block and 5.6 dB C/N of OFDM block at UHF-band. To integrate RF tuner and OFDM in a small single die, a wideband single LC-VCO operating from 1.8 GHz to 3.3 GHz is proposed and OFDM is designed by hard-wired logic.

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一个1.2V 57mW的90nm CMOS移动ISDB-T SoC

本文提出了一种采用90 nm CMOS工艺的1.2 V 57 mW SoC，用于移动ISDB-T应用。该方法在QPSK时达到了- 98.5 dBm的灵敏度，在RF调谐器块的2.5 dB NF和uhf频段OFDM块的5.6 dB C/N下，CR = - 2/3。为了将射频调谐器和OFDM集成到一个小的单芯片中，提出了一种工作频率为1.8 GHz ~ 3.3 GHz的宽带单LC-VCO，并采用硬接线逻辑设计了OFDM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2009 IEEE Asian Solid-State Circuits Conference

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