An abnormal thermal field emission high brightness and stability point electron source

V. Ptitsin
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Abstract

Experimental and theoretical researches of thermal field emission properties ZrO2/W nanoheterostructures (NBS), formed by thin (~10 nm) ZrO2 layers on the W microcrystals surface oriented in the <;100> and <;111> directions, are carried out. A study of the thermal field electron emission from a thin dielectric (ZrO2) layers at the needle - shaped W and Mo microcrystals have shown that the emission process behavior does not agree with the classical thermal field emission theory. It is established that at temperature of NBS substance ~ 2000 ±100 K electron emission process is activated at rather low values of extraction fields intensity (less ~ 50 V/μm). It is shown, that in a stationary mode of an electron emission from the investigated NBS surfaces the emission current density achieves abnormal high values (the order ~ 108 A/cm2) and the reduced brightness of an emitted electrons flux can make ~ 106A/(cm2sr V). The detected phenomenon of sharp increase of emission ability for investigated NBS was named abnormal thermal field emission (ATFE). The model of the found out phenomenon for field emission process from a NBS of a kind: a conductor (metal) - a thin dielectric layer, is offered.
一种异常热场发射高亮度稳定的点电子源
本文对W微晶表面(~10 nm)薄ZrO2层形成的ZrO2/W纳米异质结构(NBS)的热场发射特性进行了实验和理论研究。研究了针状W和Mo微晶上ZrO2薄介电层的热场电子发射过程,发现其发射过程不符合经典热场发射理论。结果表明,在NBS物质温度~ 2000±100 K下,较低的萃取场强度(小于~ 50 V/μm)激活了电子发射过程。结果表明,在所研究的NBS表面电子发射的稳态模式下,发射电流密度达到异常高值(约108 a /cm2),发射电子通量的亮度降低可达~ 106A/(cm2sr V),所研究的NBS表面发射能力急剧增加的现象被称为异常热场发射(ATFE)。给出了从导体(金属)-薄介电层的NBS中发现的场发射过程现象的模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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