{"title":"Analysis of the One-Capacitance Square-Wave Generator Made by Bipolar Transistors of the Same Type","authors":"A. Szabo, B. Dokic","doi":"10.1109/TIECI.1981.351081","DOIUrl":null,"url":null,"abstract":"A one-capacitance square-wave generator made by bipolar transistors of the same type, one of which is operating in the active region, is analyzed and examined closely. The conditions for oscillation and the resulting limits of the parameters of this astable collector-coupled multivibrator are defined. The analysis of the quasi-stable state time periods is presented. The stability of oscillation in relation to the change of the power supply voltage and the change of the transistor parameters with temperature is examined. Useful simplified expressions for the time periods and recommended values for some critical parameters are given.","PeriodicalId":109541,"journal":{"name":"IEEE Transactions on Industrial Electronics and Control Instrumentation","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Industrial Electronics and Control Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TIECI.1981.351081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A one-capacitance square-wave generator made by bipolar transistors of the same type, one of which is operating in the active region, is analyzed and examined closely. The conditions for oscillation and the resulting limits of the parameters of this astable collector-coupled multivibrator are defined. The analysis of the quasi-stable state time periods is presented. The stability of oscillation in relation to the change of the power supply voltage and the change of the transistor parameters with temperature is examined. Useful simplified expressions for the time periods and recommended values for some critical parameters are given.