Q. Li, K. Li, X. Xie, Y. Fu, Z. Yang, Y. Shen, Y. Wang, A. Beling, J. Campbell
{"title":"High-power flip-chip bonded photodiode with 110 GHz bandwidth","authors":"Q. Li, K. Li, X. Xie, Y. Fu, Z. Yang, Y. Shen, Y. Wang, A. Beling, J. Campbell","doi":"10.1109/IPCON.2015.7323550","DOIUrl":null,"url":null,"abstract":"We report 110 GHz flip-chip-bonded modified uni-traveling-carrier (MUTC) photodiodes with RF output power as high as 9.6 dBm at 100 GHz frequency.","PeriodicalId":375462,"journal":{"name":"2015 IEEE Photonics Conference (IPC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCON.2015.7323550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
We report 110 GHz flip-chip-bonded modified uni-traveling-carrier (MUTC) photodiodes with RF output power as high as 9.6 dBm at 100 GHz frequency.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
