Performance analysis of III–V based long wavelength QWIP

2013 International Conference on Microwave and Photonics (ICMAP) Pub Date : 2013-12-01 DOI:10.1109/ICMAP.2013.6733550

M. A. Billaha, M. Das

引用次数: 0

Abstract

Aim of the present work is to investigate the performance of GaAs/AlxGa1-xAs quantum well infrared photodetector (QWIP) using theoretical modeling via transfer matrix method and using professional device simulation software, APSYS. Model is verified with experimental data and various performance characteristics are obtained for intersubband transition in QWIP. Peak absorption occurs at wavelength of 8.75 μm using APSYS and at 8.52 μm using theoretical calculation.

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基于III-V的长波QWIP性能分析

本工作的目的是利用传递矩阵法和专业器件仿真软件APSYS对GaAs/AlxGa1-xAs量子阱红外探测器(QWIP)的性能进行理论建模研究。用实验数据对模型进行了验证，得到了QWIP中子带间跃迁的各种性能特征。通过APSYS和理论计算，分别在波长8.75 μm和8.52 μm处出现峰值吸收。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 International Conference on Microwave and Photonics (ICMAP)

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