Fabrication and Electrical Properties of Novel ZnTiO3/Si Capacitors with Various Zn(NO3)2 Concentrations

Abstract

LPD method has many advantages such as low-temperature deposition, large deposition area, good film uniformity, and good step coverage. Therefore, we choose the LPD method to deposit zinc titanate (ZnTiO3) thin films, using hexafluorotitanium ammonia ((NH4)2TiF6) powder and zinc nitrate (Zn(NO3)2•6H2O) powder to synthesize zinc titanate film. By changing the molar concentration of zinc nitrate and post-deposition annealing, we obtain the best thin film data. When zinc nitrate was 1.3 M molar volume concentration and annealed for one hour using nitrogen as the post-deposition annealing gas, measured electrical properties including oxide capacitance (Cox), leakage current Density, k value, equivalent oxide thickness (EOT) effective oxide charge density (QEFF) and interface state density (Dit) are 50.1 pF, 1.94 × 10^-5 A/cm² at +5 V, 16.95, 48.8 nm, 1.76 × 10¹¹ cm^-2, and 6.2 × 10¹¹ cm^-2eV^-1, respectively. The data reveal that the zinc titanate (ZnTiO3) film is successfully deposited on Si and has good electrical properties.