Comparison of SiC Synchronous Rectification and Schottky Diode in Voltage Source Inverters

2018 IEEE Energy Conversion Congress and Exposition (ECCE) Pub Date : 2018-09-01 DOI:10.1109/ECCE.2018.8557879

Cheng Zeng, Zongjian Li, F. Yuan, Xi Jiang, Zhizhi He, Z. Shen, Jun Wang

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引用次数: 8

Abstract

SiC Schottky diode has been widely used as the antiparallel freewheeling diode in the IGBT or SiC MOSFET based power inverter applications. However, these solutions have drawbacks of large switching loss of the IGBT or costly SiC MOSFET. To achieve the cost-effectiveness and higher conversion efficiency, we propose a low power SiC MOSFET with the synchronous rectifier (SR) operation in replacement of the SiC Schottky diode in an IGBT based voltage source inverter (VSI). The SiC MOSFET works as an auxiliary switch of the main IGBT, greatly reducing the forward conduction loss. Its SR operates in the reverse conduction, greatly reducing the conduction loss, especially at light load. And it also enables the zero voltage switching operation of the IGBT, greatly reducing the switching loss of the IGBT. The conduction and switching characteristics of the SiC Schottky diode and SR are measured and compared. Then a 4kW single-phase VSI prototype based on these two solutions are investigated. Experimental results show that the SiC SR operation can achieve 28% smaller total power losses, 0.9% higher conversion efficiency and 50°C lower case temperature of power switches than the SiC Schottky diode in VSI.

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电压源逆变器中SiC同步整流与肖特基二极管的比较

SiC肖特基二极管作为反并联自由轮二极管在基于IGBT或SiC MOSFET的功率逆变器中得到了广泛的应用。然而，这些解决方案存在IGBT或SiC MOSFET开关损耗大的缺点。为了实现成本效益和更高的转换效率，我们提出了一种具有同步整流器(SR)操作的低功率SiC MOSFET，以取代基于IGBT的电压源逆变器(VSI)中的SiC肖特基二极管。SiC MOSFET作为主IGBT的辅助开关，大大降低了正向导通损耗。它的SR工作在反向导通，大大降低了导通损耗，特别是在轻负载下。它还能实现IGBT的零电压开关工作，大大降低了IGBT的开关损耗。测量和比较了SiC肖特基二极管和SR的导通和开关特性。然后基于这两种方案设计了4kW单相VSI样机。实验结果表明，与VSI中的SiC肖特基二极管相比，SiC SR操作可使总功耗降低28%，转换效率提高0.9%，功率开关的机箱温度降低50℃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 IEEE Energy Conversion Congress and Exposition (ECCE)

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