An Open Source Compatible Framework to Fully Autonomous Digital LDO Generation

Yaswanth K. Cherivirala, Mehdi Saligane, D. Wentzloff
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引用次数: 3

Abstract

This work presents an open-source methodology to automate the design and layout of a low dropout (LDO) regulator from high-level performance specifications. LDO designs with this methodology have been demonstrated in commercial 65nm, 12nm, 130nm processes and the open-source 130nm Skywater PDK. The tool currently supports LDO designs with 50mV/100mV dropout for an input voltage range of 0.6V-1.3V (130nm and 65nm), 0.6V-0.9V (12nm), 1.8V-3.3V (Skywater 130nm) and a maximum load current ranging from 0.5mA-25mA (130nm and 65nm), 1mA-20mA (12nm), 0.5mA-50mA (Skywater 130nm). Cell-based design approach is adopted using an auxiliary cell library to enable mixed-signal design synthesis. A port to a new technology only requires a one-time manual layout for auxiliary library generation. The design automation includes a technology-agnostic modeling step and generates the LDO layout automatically. A bi-directional shift register based DLDO with a 1-bit comparator and a stochastic flash ADC (achieving 15x faster settling time) for error detection has been generated using the tool and validated using silicon measurements from 65nm process. LDO designs with different switch types and load configurations have been fabricated in open-source Skywater 130nm.
一个完全自主数字LDO生成的开源兼容框架
这项工作提出了一种开源的方法,从高级性能规范自动化设计和布局低差(LDO)稳压器。采用这种方法的LDO设计已经在商用65nm、12nm、130nm工艺和开源130nm Skywater PDK中得到了验证。该工具目前支持50mV/100mV电压降的LDO设计,输入电压范围为0.6V-1.3V (130nm和65nm), 0.6V-0.9V (12nm), 1.8V-3.3V (Skywater 130nm),最大负载电流范围为0.5mA-25mA (130nm和65nm), 1mA-20mA (12nm), 0.5mA-50mA (Skywater 130nm)。采用基于小区的设计方法,利用辅助小区库实现混合信号设计合成。移植到一项新技术只需要一次性手动布局辅助库生成。设计自动化包括与技术无关的建模步骤,并自动生成LDO布局。使用该工具生成了一个基于双向移位寄存器的DLDO,带有1位比较器和随机闪存ADC(实现15倍快的沉淀时间),用于错误检测,并使用65nm工艺的硅测量进行了验证。不同开关类型和负载配置的LDO设计已经在开源的Skywater 130nm上制造出来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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