Fast rise time pulsed power generator using IGBTs and coaxial magnetic pulse compression circuit

T. Sakugawa, S. Ueda, H. Akiyama, K. Suematsu, A. Kouda, Masashi Watanabe
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引用次数: 3

Abstract

All solid-state pulsed power generators, which are operated with long lifetime, compactness and high reliability, have been developed to be used for industrial applications, such as excimer laser, high energy density plasma (EUV sources) and pulse ozonizer. Moreover, requirements of these applications are repetitive operation and fast risetime voltage. Recently, semiconductor power device technology has improved the performance of fast high voltage switching and low switching loss. In particular, insulated gate bipolar transistor (IGBT) is highly efficient semiconductor switching device. However, the IGBT switch is still not sufficient to drive the pulse laser and the pulse ozonizer itself. In practical systems, semiconductor switches are used with the assistance of magnetic switches. We have studied and developed high repetition rate small size pulsed power generator for generation of discharge plasma. This generator consists of an IGBT switch circuit, a step-up pulse transformer and multi-stage magnetic pulse compression circuit (MPC) at the last magnetic pulse compression stage, has a coaxial configuration. This fast-rising pulsed power generator using a coaxial MPC has been developed for fast rise time output current. We use two kinds of magnetic core materials, a Co-based amorphous alloy and a nanocrystalline Fe-based soft magnetic alloy. Two kinds of magnetic cores were investigated in the coaxial MPC to evaluate loss of the magnetic cores, leakage current of saturable inductors, and circuit inductance. The pulsed power generator produced a pulsed-high-current of 3.7 kA with a rise time of 7 ns at a repetition rate of 1000 pulses per second (pps). This generator is able to generate an output voltage of about 20 kV with voltage rise time of less than 10 ns. We did the operation test and generate the streamer discharge with 1000 pps.
采用igbt和同轴磁脉冲压缩电路的快速上升时间脉冲电源发生器
全固态脉冲电源具有寿命长、结构紧凑、可靠性高的特点,可用于准分子激光、高能量密度等离子体(EUV源)和脉冲臭氧发生器等工业应用。此外,这些应用的要求是重复操作和快速上升时间电压。近年来,半导体功率器件技术提高了快速高压开关和低开关损耗的性能。特别是绝缘栅双极晶体管(IGBT)是一种高效的半导体开关器件。然而,IGBT开关仍然不足以驱动脉冲激光器和脉冲臭氧发生器本身。在实际系统中,半导体开关与磁性开关配合使用。研究开发了用于放电等离子体产生的高重复倍率小尺寸脉冲电源。该发生器由IGBT开关电路、升压脉冲变压器和末级磁脉冲压缩多级磁脉冲压缩电路(MPC)组成,采用同轴结构。为了实现输出电流的快速上升,研制了一种同轴MPC快速上升脉冲电源。我们使用了两种磁芯材料,一种是钴基非晶合金,一种是纳米晶铁基软磁合金。研究了两种同轴磁控电容的磁芯损耗、可饱和电感漏电流和电路电感。脉冲电源发生器以每秒1000个脉冲(pps)的重复速率产生3.7 kA的脉冲大电流,上升时间为7 ns。该发电机能够产生约20kv的输出电压,电压上升时间小于10ns。我们进行了运行试验,产生了1000 pps的流光放电。
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