Growth of Ge1-xSnx alloys for MWIR sensing applications

Abstract

Films of Ge1-xSnx have been grown on Ge, Si, and Al2O3 substrates by remote plasmaenhanced chemical vapor deposition with Sn concentrations greater than 10% and thicknesses greater than 1 μm. Characterization data of the structural, optical, and electrical properties of these alloys are presented. Device characteristics from planar photoconductor and vertical p-n devices grown directly on Si substrates show promise for future MWIR sensing applications.